Fishing – trapping – and vermin destroying
Patent
1988-10-31
1989-07-11
Hearn, Brian E.
Fishing, trapping, and vermin destroying
148DIG1, 148DIG148, 20419225, H01L 2100, H01L 2102, H01L 3100, H01L 3118
Patent
active
048472158
ABSTRACT:
A method for forming a SiC film having a wide optical energy gap and a high conductivity, which is capable of being stacked on a substrate of a large area uniformly. The SiC film is formed by supplying a material gas composed of monosilane gas, methane gas, diboran gas and hydrogen gas and having a hydrogen dilution ratio of about 144 and carbon mixing ratio of about 0.35, to the substrate, and supplying rf power of 60 to 270W(rf power density=80 to 350mW/cm.sup.2) under a gas pressure of 0.2 torr at a substrate temperature of 220.degree. C. The obtained film exhibits high dark-conductivity of 10.sup.-6 Scm.sup.-1 or more, and a Raman spectrum light thereof peaks at around 520 cm.sup.-1.
REFERENCES:
patent: 4410559 (1983-10-01), Hamakawa et al.
patent: 4499331 (1985-02-01), Hamakawa et al.
patent: 4582721 (1986-04-01), Yoshino et al.
patent: 4718947 (1988-01-01), Arya
Yoshihara, H; SiC Synthesis by a plasma deposition process; Thin Solid Films, vol. 76, No. 1, pp. 1-10, 1/30/81.
Characterization of High-Conductive p-Type A-SiC:H Producted by Highly Hydrogen Dilution (Hanaki, Hattori & Hamakawa) Nov./1987 pp. 49-52.
High-Conductive Wide Band Gap P-Type A-SiC;H Prepared by ECR CVD and its Application to High Efficiency A-Si Basis Solar Cells (Hattori, Kruangam, Katoh, Nitta, Okamoto and Hamakawa) May/1987 pp. 689-694.
Vidicon Mode Characterization of a-Si Solar Cells (Hamakawa, Okamoto and Talakura) Oct./1985 pp. 813-818.
a-Si Basis Heterojunction Stacked Solar Cells (Hamakawa, Matsumoto, Zhang-Yang, Okuyama, Takakura, Okamoto) Mat. Res. Soc. Symp. Proc. vol. 70, 1986 Materials Research Society.
Physics and Technologies of Efficiency Improvement for Amorphous Silicon Solar Cells, (Hamakawa) Aug. 1986-pp. 55-60.
Translation of Related Portions of Extended Abstract 29P-F-17 Valency Control of a-SiC:H prepared by ECR plasma CVD (Hattori, Kruangum, Toyama, Katoh, Okamoto and Hamakawa) Mar. 1987, pp. 1-2 and 251.
Hanaki Kenichi
Hattori Tadashi
Kitagawa Hitomi
Tominaga Takayuki
Everhart B.
Hearn Brian E.
Nippon Soken Inc.
LandOfFree
Method for forming silicon carbide semiconductor film does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming silicon carbide semiconductor film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming silicon carbide semiconductor film will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-437094