Method for forming silicon-boron binary compound layer as boron

Details Method for forming silicon-boron binary compound layer as boron Method for forming silicon-boron binary compound layer as boron

1995-12-14

1997-10-07

Niebling, John

Fishing, trapping, and vermin destroying

437141, 437160, 437950, 148DIG1, 148DIG34, 148DIG61, 148DIG144, 148DIG152, H01L 2120

Patent

active

056747772

ABSTRACT:
The present invention is related to a method for fabricating a silicon electronic device having a boron diffusion source layer, includes steps of: a) providing a silicon substrate; b) depositing a silicon layer on said silicon substrate; and c) growing a silicon-boron binary compound layer on said silicon layer as said boron diffusion source. When the Si-B layer is formed by a UHV/CVD process according to the present invention, the boron concentration in the Si-B binary compound layer will be extraordinary high (up to 1.times.10.sup.21 to 5.times.10.sup.22 atoms/cm.sup.3).

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