Method for forming shorting contact for semiconductor which allo

Details Method for forming shorting contact for semiconductor which allo Method for forming shorting contact for semiconductor which allo

1990-07-13

1991-07-23

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437924, 437203, 148DIG26, 148DIG102, H01L 21441

Patent

active

050343467

ABSTRACT:
A method is disclosed for forming a shorting contact for shorting P-type and N-type conductivity regions in a semiconductor together. In one embodiment of this method, the P-type region is substantially a square and is surrounded by the N-type region. A substantially square contact opening is made to expose the P-type region and a portion of the N-type region. Sides of the contact opening are formed to be at substantially 45 degree angles with respect to sides of the substantially square P-type region. In this manner, the alignment tolerance for forming the contact opening is less critical than if the sides of the contact opening were parallel to the sides of the P-type region. The contact opening is then filled with a conductive material to electrically short the P-type region to the N-type region. The conductivity types in this example may be reversed.

REFERENCES:
patent: 4443931 (1984-04-01), Baciga et al.
patent: 4589002 (1986-05-01), Olmstead
patent: 4920064 (1990-04-01), Waight

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