Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1979-05-14
1981-02-17
Rutledge, L. Dewayne
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29576E, 29576W, 29578, 29580, 148187, 156647, 156649, 156657, 156662, 357 20, 357 50, 357 56, H01L 2120, H01L 2176
Patent
active
042513006
ABSTRACT:
A method for forming a shaped buried layer in a semiconductor structure includes the steps of removing a portion of semiconductor material from adjacent the surface of the semiconductor substrate to form an indentation, introducing a dopant into the surface of the indentation to form regions of impurity in the semiconductor substrate, forming a region of epitaxial material on the surface of the indentation, and forming regions of insulating material to surround the epitaxial material.
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Agusta et al., "Monolithic Integrated . . . Base Regions", I.B.M. Tech. Discl. Bull., vol. 9, No. 5, Oct., 1966, pp. 546-547.
Wu, L. L., "Doped P & N Pockets for Complementary FETS".
Ibid., vol. 15, No. 7, Dec., 1972, p. 2279.
Fairchild Camera and Instrument Corporation
Meetin Ronald J.
Pollock Michael J.
Rutledge L. Dewayne
Saba W. G.
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