Method for forming shallow well of semiconductor device...

Details Method for forming shallow well of semiconductor device... Method for forming shallow well of semiconductor device...

2005-01-18

2005-01-18

Lebentritt, Michael S. (Department: 2824)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S424000, C438S435000, C438S437000

Reexamination Certificate

active

06844239

ABSTRACT:
A method for forming a shallow well of a semiconductor device using low-energy ion implantation is described. A well region is formed to the depth of a trench isolation layer using a low-energy, high-dose ion implantation process. The method for forming a well using low-energy ion implantation can minimize well margin reduction caused by impurity spread and well margin reduction caused by shrinkage of a thick photoresist pattern.

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patent: 5770504 (1998-06-01), Brown et al.
patent: 6144086 (2000-11-01), Brown et al.
patent: 6248645 (2001-06-01), Matsuoka et al.
patent: 20020086499 (2002-07-01), Sridhar et al.

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