Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2006-10-31
2006-10-31
Thai, Luan (Department: 2891)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S296000, C438S294000, C438S295000, C438S435000
Reexamination Certificate
active
07129149
ABSTRACT:
The present invention relates to a shallow trench isolation structure and a method for forming a shallow trench isolation structure on a semiconductor substrate. A masking structure that includes a hard mask is formed over the semiconductor substrate, and an etch is performed so as to form trenches within the semiconductor substrate. An anti-reflective film is deposited such that it extends within the trench. A dielectric film is deposited over the anti-reflective film such that it fills the trench. A heating process step is then performed to anneal the substrate, rounding the corners of the trench. A chemical mechanical polishing process is performed to remove those portions of the anti-reflective film and the dielectric film that overlie the hard mask. The hard mask is then removed, producing a shallow trench isolation structure that prevents lifting and notching in subsequent fabrication steps.
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Planarization and Integration of Shallow Trench Isolation, Pan et al., 1999 VMIC, Santa Clara, CA, Jun. 1998.
Chen Chih-Hsiang
Gu Yiming
Lo Guo-Qiang
Glass & Associates
Integrated Device Technology Inc.
Thai Luan
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