Method for forming shallow trench isolation in semiconductor...

Details Method for forming shallow trench isolation in semiconductor... Method for forming shallow trench isolation in semiconductor...

2005-12-30

2009-08-25

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S296000, C438S404000, C257SE21546

Reexamination Certificate

active

07579256

ABSTRACT:
A method for forming shallow trench isolation in a semiconductor device including forming a pad oxide, a pad nitride, and a pore-generating layer on an entire surface of a semiconductor substrate in successive order; etching the pore-generating layer, the pad nitride, the pad oxide and the substrate to form a trench in the substrate; forming a trench oxide over the entire surface of the substrate by a CVD process to fill the trench; and removing the trench oxide in an active device area while retaining the trench oxide in the trench.

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