Method for forming shallow trench isolation

Details Method for forming shallow trench isolation Method for forming shallow trench isolation

1997-05-27

1999-11-02

Chaudhuri, Olik

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438435, H01L 2176

Patent

active

059769491

ABSTRACT:
A method for forming shallow trench isolation that can avoid dishing effect produced by a conventional manufacturing process. The method utilizes photolithographic and etching techniques to define a dummy pattern inside a shallow trenches having a deposited dielectric layer, and then through the deposition of a second dielectric layer, followed by a planarization using a chemical-mechanical polishing method, a shallow trench isolation having a good planar surface is obtained.

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