Method for forming shallow trench isolation

Details Method for forming shallow trench isolation Method for forming shallow trench isolation

1996-04-23

1998-01-27

Fourson, George R.

Fishing, trapping, and vermin destroying

1566361, H01L 2176

Patent

active

057121850

ABSTRACT:
A method for forming shallow trench isolation without a recessed edge problem is disclosed. The present invention comprises forming a pad oxide layer on a substrate. Next, a silicon nitride layer is formed on the pad oxide, and a sacrificial layer is formed on the silicon nitride layer. A photo-resist layer that defines an active region on the sacrificial layer is applied. Thereafter, the portions of the sacrificial layer, the silicon nitride layer, the pad oxide layer and the substrate are removed to form a trench. Portions of the silicon nitride layer are undercut, and a dielectric layer is formed to fill the trench. The dielectric layer is planarized until the silicon nitride layer is exposed. Finally, the silicon nitride layer and the pad oxide layer are removed.

REFERENCES:
patent: 4663832 (1987-05-01), Jambotkar
patent: 5578518 (1996-11-01), Koike et al.

Affiliated with

Also associated with

Rating

Method for forming shallow trench isolation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming shallow trench isolation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming shallow trench isolation will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-341814