Method for forming semiconductor structure with improved isolati

Details Method for forming semiconductor structure with improved isolati Method for forming semiconductor structure with improved isolati

1978-05-02

1981-02-17

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

29571, 148 15, 148187, 427 93, 4272554, H01L 21316

Patent

active

042515718

ABSTRACT:
In a field effect device such as a charge coupled device or field effect transistor in which at least two levels of polycrystalline silicon conductors are used; these two levels of polycrystalline silicon are isolated from one another with a dielectric layer. Disclosed is a composite dielectric layer formed either by in situ oxidation of the first polycrystalline silicon layer plus chemical vapor deposited silicon dioxide or, in the alternative, the composite dielectric layer is formed by a phosphosilicate glass layer with thermal reoxidation of the first polycrystalline silicon layer.

REFERENCES:
patent: 3560810 (1971-02-01), Balk
patent: 3825442 (1974-07-01), Moore
patent: 3897282 (1975-07-01), White
patent: 3913126 (1975-10-01), Hooker
patent: 3939293 (1976-02-01), Brusic
patent: 4075045 (1978-02-01), Rideout
patent: 4086614 (1978-04-01), Scheidel
patent: 4123564 (1978-10-01), Ajima

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