Method for forming semiconductor laser emitting light from slant

Details Method for forming semiconductor laser emitting light from slant Method for forming semiconductor laser emitting light from slant

1996-01-29

1998-09-29

Niebling, John

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

438 40, 438 41, 438 46, 148DIG95, 257623, H01L 2100

Patent

active

058145311

ABSTRACT:
A semiconductor laser includes a patterned semiconductor substrate including a lower flat plane portion, an upper flat plane portion, and a stripe-shaped slant plane portion connecting the lower flat plane portion and the upper flat plane portion, an active layer formed on the semiconductor substrate, an upper cladding layer formed on the active layer, current blocking layers formed on portions of the cladding layer, the portions respectively corresponding to the lower flat plane portion to the upper flat plane portion; and a current channel region formed on a portion of the upper cladding layer corresponding to the slant plane portion. There are satisfied relations t1>t2 and tan.sup.-1 (2t1/W).ltoreq..theta.+.phi.<90.degree., where t2 is thickness of the flat plane portions of the upper cladding layer, t1 is thickness of the slant plane portion of the upper cladding layer, .theta. is an angle formed between a boundary between the lower flat plane portion and the slant plane portion and a bottom plane of the lower flat plane portion, .phi. is an angle formed between a bottom plane of the slant plane portion and extension of the bottom plane of the lower flat plane portion, and W is width of the stripe of the slant plane portion of the active layer.

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