Method for forming semiconductor laser device

Details Method for forming semiconductor laser device Method for forming semiconductor laser device

1997-03-03

1998-07-07

Niebling, John

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

438 37, 438 39, 438 46, H01L 2100

Patent

active

057767920

ABSTRACT:
On an n-type semiconductor substrate, a buffer layer and a cladding layer are formed. On the cladding layer, an active layer made of Ga.sub.1-X Al.sub.X As is formed. On the active layer, an n-type first optical guiding layer made of Ga.sub.1-Y1 Al.sub.Y1 As is formed, and on the first optical guiding layer, an n-type second optical guiding layer made of Ga.sub.1-Y2 Al.sub.Y2 As is formed in stripe. On the first optical guiding layer and the second optical guiding layer, an n-type cladding layer made of Ga.sub.1-Y3 Al.sub.Y3 As is formed. The interface resistance between the first optical guiding layer and the cladding layer is larger than both the interface resistance between the first optical guiding layer and the second optical guiding layer and the interface resistance between the second optical guiding layer and the cladding layer. Between X, Y1, Y2, and Y3 of each AlAs mole fraction of the active layer, first and second optical guiding layers, and cladding layer, the relationships of Y3>Y2 and Y1>X.gtoreq.0 are satisfied.

REFERENCES:
patent: 5321712 (1994-06-01), Itaya et al.
patent: 5331656 (1994-07-01), Tamaka
patent: 5386429 (1995-01-01), Naito et al.
patent: 5446953 (1995-09-01), Naito et al.
patent: 5466950 (1995-11-01), Sugawara et al.
patent: 5574743 (1996-11-01), Van Der Poel et al.

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