Method for forming semiconductor fine-pitch pattern

Details Method for forming semiconductor fine-pitch pattern Method for forming semiconductor fine-pitch pattern

2008-05-16

2010-11-23

Toledo, Fernando L (Department: 2895)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C430S314000, C438S700000, C257SE21026, C257SE21034

Reexamination Certificate

active

07838435

ABSTRACT:
A method for forming a fine-pitch pattern on a semiconductor substrate is provided. The method includes patterning the semiconductor substrate to form a plurality of fine lines, forming a thermal oxide layer on the fine lines, polishing the thermal oxide layer to expose a top surface of the fine lines; etching the fine lines using the thermal oxide layer as a mask to expose first portions of the semiconductor substrate, etching a central bottom portion of the thermal oxide layer to expose second portions of the semiconductor substrate, and etching the semiconductor substrate using the etched thermal oxide layer as a mask.

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Office Action issued from the Korean Patent Office on Aug. 18, 2008, in related Korean patent application No. 10-2007-0048577.

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