Method for forming semiconductor contacts by electroless plating

Details Method for forming semiconductor contacts by electroless plating Method for forming semiconductor contacts by electroless plating

1989-08-22

1991-12-24

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437247, 437245, 427 98, H01L 21208, H01L 21205

Patent

active

050752596

ABSTRACT:
Semiconductor device structures having very smooth surfaces and very high doping levels of opposite types present on the same wafer may be plated in the same electroless plating bath without differentiation between the N and P regions or rough and smooth surface regions. This is achieved by a pre-treatment involving coating the wafer surface with a metal salt (e.g., NiCl in glycol and water) and reducing the metal salt in an oxygen free atmosphere (e.g., hydrogen) at a temperature (e.g., >300.degree. C. for Si) sufficient to promote formation of an intermetallic between the reduced metal and the semiconductor substrate. This provides very uniform and effective nucleation sites for the subsequent electroless plating process irrespective of the smoothness, doping type and doping density of the semiconductor surface.

REFERENCES:
patent: 3597834 (1971-08-01), Lathrop et al.
patent: 4152824 (1979-05-01), Gonsiorawski
patent: 4182781 (1980-01-01), Hooper et al.
patent: 4297393 (1981-10-01), Denning et al.

Affiliated with

Also associated with

Rating

Method for forming semiconductor contacts by electroless plating does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming semiconductor contacts by electroless plating, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming semiconductor contacts by electroless plating will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-43329