Coating processes – Electrical product produced – Condenser or capacitor
Patent
1978-05-01
1980-11-11
Smith, John D.
Coating processes
Electrical product produced
Condenser or capacitor
148 15, 156653, 156657, 427 89, 427 93, H01L 2948, H01L 21441
Patent
active
042333377
ABSTRACT:
A method for selectively depositing contacts in semiconductor regions. One set of contact openings is protected by a barrier layer during the metallization of another set of exposed contact openings to improve the cleanliness and reliability of the contacts. The barrier layer is then removed and a second layer of metallization is deposited in both sets of openings. In the preferred embodiment a standard diffusion mask is used to define all contact regions and a screen oxide is thermally grown in each of the contact openings. A blocking photoresist mask is then applied and patterned to expose the oxide in those openings in which a first set of contacts is to be formed. The screen oxide is removed and the first layer of metallization, typically platinum silicide, is then formed. The screen oxide is then removed from the protected contact areas and the second layer of metallization, for example, chrome, aluminum, or other metals or combinations thereof are deposited in all openings, thereby forming one layer of metallurgy in the second set of openings and two layers in the first set.
REFERENCES:
patent: 3904454 (1975-09-01), Magdo et al.
patent: 3995301 (1976-11-01), Magdo
patent: 4018627 (1977-04-01), Polata
Berger et al., "Masking Process for Base and Isolation Diffusion", IBM Tech. Dis. Bulletin, vol. 14, No. 5, Oct. 1971.
Barile et al., "Implanted Emitter Process for Semiconductor Transistor", _IBM Tech. Disclosure Bulletin, vol. 18, No. 7, Dec. 1975.
Friedman Jules D.
Saraf Lumdas H.
Bunnell David M.
International Business Machines - Corporation
Smith John D.
LandOfFree
Method for forming semiconductor contacts does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming semiconductor contacts, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming semiconductor contacts will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1691176