Method for forming self-aligned vias in multi-metal integrated c

Details Method for forming self-aligned vias in multi-metal integrated c Method for forming self-aligned vias in multi-metal integrated c

1997-09-03

1999-05-18

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438737, 438740, 216 38, H01L21/00

Patent

active

059045698

ABSTRACT:
A process for forming a via in a semiconductor device using a self-aligned metal pillar to connect metal layers separated by a dielectric. A first aluminum layer is formed on an oxide layer overlying a semiconductor substrate, a titanium nitride layer is formed on the aluminum layer and finally a second aluminum layer is formed on the titanium nitride layer. In one continuous etching step, the stack of aluminum/titanium nitride/aluminum is then patterned and etched. A first dielectric is deposited overlying the exposed regions of the oxide layer and the formed metal stack. The wafer is then planarized exposing the top of the second aluminum layer. The wafer is again patterned and the second layer of aluminum is etched using the titanium nitride as an etch stop. A second dielectric is deposited to fill the resulting gaps and CMP processes are used to planarize the wafer and expose the top of the aluminum pillar. A third aluminum layer is formed on the overlying dielectric to make electrical contact to the exposed surface of the pillar.

REFERENCES:
patent: 4917759 (1990-04-01), Fisher
patent: 5258096 (1993-11-01), Sandhu
patent: 5451543 (1995-09-01), Woo et al.
patent: 5827768 (1998-10-01), Lin et al.

Affiliated with

Also associated with

Rating

Method for forming self-aligned vias in multi-metal integrated c does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming self-aligned vias in multi-metal integrated c, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming self-aligned vias in multi-metal integrated c will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1756030