Method for forming self-aligned silicide in a semiconductor devi

Details Method for forming self-aligned silicide in a semiconductor devi Method for forming self-aligned silicide in a semiconductor devi

1995-04-03

1997-02-25

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437245, H01L 21285

Patent

active

056058659

ABSTRACT:
Self-aligned silicide regions (24) are formed in a semiconductor device (10) using vapor phase reaction. A chemical vapor deposition system (40) is used, but rather than depositing a blanket silicide material, a precursor (48) is introduced into the reaction chamber (42) and reacts with only exposed silicon and polysilicon members of the device. The reaction is assisted by heating the substrate to a temperature at which the precursor is volatile. Because the precursor source reacts only with exposed silicon and polysilicon regions, subsequent etch steps are unnecessary. In one form, cobalt silicide regions are formed using a cobalt carbonyl as the precursor source.

REFERENCES:
patent: 4619038 (1986-10-01), Pintchovski
patent: 4814294 (1989-03-01), West et al.
patent: 4938999 (1990-07-01), Jenkin
patent: 5190893 (1993-03-01), Jones, Jr. et al.

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