Method for forming self-aligned contacts and local...

Details Method for forming self-aligned contacts and local... Method for forming self-aligned contacts and local...

2008-06-03

2008-06-03

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S773000, C257S758000, C257S315000, C257SE23145, C438S233000, C438S229000, C438S631000

Reexamination Certificate

active

07382054

ABSTRACT:
The present invention relates generally to semiconductors, and more specifically to semiconductor memory device structures and an improved fabrication process for making the same. The improved fabrication process allows the self-aligned contacts and local interconnects to the processed simultaneously. The process allows the minimal distance requirement between the self-aligned contacts and the local interconnects to be widened, which makes the patterning of self-aligned contacts and local interconnects easier. The widened minimal distance requirement also allows further memory cell shrinkage. The improved structures of self-aligned contacts and local interconnects also have excellent isolation characteristic.

REFERENCES:
patent: 6197670 (2001-03-01), Park
patent: 6482699 (2002-11-01), Hu et al.
patent: 6881659 (2005-04-01), Park et al.

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