Method for forming self-aligned contact hole and semiconductor d

Details Method for forming self-aligned contact hole and semiconductor d Method for forming self-aligned contact hole and semiconductor d

1994-03-02

1995-06-06

Wojciechowicz, Edward

Fishing, trapping, and vermin destroying

437 43, 437 49, 437235, 437919, 257296, H01L 21265, H01L 21465, H01L 2978

Patent

active

054223156

ABSTRACT:
In a semiconductor device that includes a first level conductor layer, a second level conductor layer, and a third level conductor layer, the second level conductor layer being positioned at a level between the first and third level conductor layers, a contact hole for electrically connecting the first and third conductor layers is formed in a self-aligned manner, by utilizing an insulating layer which is formed to cover the second level conductor layer in such a manner that the insulator layer surrounds or confines an area where the contact hole is to be formed.

REFERENCES:
patent: 5091761 (1992-02-01), Hiraiwa et al.

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