Method for forming Schottky photodiodes

Details Method for forming Schottky photodiodes Method for forming Schottky photodiodes

1990-09-24

1991-04-23

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437904, 437905, H01L 31376

Patent

active

050100181

ABSTRACT:
A method for fabricating Schottky photodiodes includes the steps of: forming a base electrode on the principal substrate surface; depositing a layer of N+ amorphous silicon on the base electrode; depositing a layer of intrinsic silicon on the N+ amorphous silicon layer; depositing a Schottky contact on the intrinsic silicon layer; and selectively patterning the Schottky contact and the two silicon layers with the same photoresist mask to form a Schottky photodiode island.

REFERENCES:
patent: 3820235 (1974-06-01), Goldman
patent: 3925078 (1975-12-01), Kroger et al.
patent: 4096622 (1978-06-01), MacIver
patent: 4110488 (1978-08-01), Risko
patent: 4162203 (1979-07-01), Eden et al.
patent: 4163677 (1979-08-01), Carlson et al.
patent: 4180422 (1979-12-01), Rosvold
patent: 4742017 (1988-05-01), Bredthauer
patent: 4859616 (1989-08-01), Losehand et al.

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