Method for forming rugged tungsten film and method for fabricati

Details Method for forming rugged tungsten film and method for fabricati Method for forming rugged tungsten film and method for fabricati

1995-04-10

1996-10-08

Quach, T. N.

Fishing, trapping, and vermin destroying

437190, 437192, 437919, H01L 21283

Patent

active

055630901

ABSTRACT:
A DRAM cell capacitor having a high capacitance is obtained by forming a lower capacitor electrode of TiN and a roughened tungsten film on the TiN layer. A high dielectric constant film, such as tantalum pentaoxide, is then provided on the tungsten film and an upper capacitor electrode is deposited on the dielectric film. A method of forming the roughened tungsten film includes the step of depositing tungsten on the TiN layer at a temperature in the range of 200.degree.-650.degree. C.

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Watanabe, H., et al., "An Advanced Fabrication . . . ", Ext. Abs. 1991 Int. Conf. Sol. Dev. & Mat., 1991, pp. 478-480.

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