Method for forming retrograde channel profile by phosphorus impl

Details Method for forming retrograde channel profile by phosphorus impl Method for forming retrograde channel profile by phosphorus impl

1995-10-11

1996-08-20

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 30, 437 45, H01L 21266

Patent

active

055478824

ABSTRACT:
A method for forming retrograde semiconductor substrate channel impurities profile of a semiconductor device by using phosphorus ions implantation, includes the steps of forming a sacrificial oxide layer on a semiconductor substrate, ion-implanting boron ions to adjust threshold voltage of the device, removing the sacrificial oxide layer, forming a gate oxide layer on the semiconductor substrate, depositing a gate polysilicon layer on the gate oxide layer, forming a gate by etching the gate polysilicon layer, ion-implanting firstly by implanting phosphorus ions to form lightly doped drain regions, and ion-implanting secondly by implanting phosphorus ions into the semiconductor substrate channel to form retrograde channel impurities profile as well as to achieve proper threshold voltage.

REFERENCES:
patent: 4402761 (1983-09-01), Feist
patent: 4578128 (1986-03-01), Mundt et al.
patent: 5141882 (1992-08-01), Komori et al.
patent: 5422301 (1995-06-01), Otsuki

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