Method for forming resist pattern

Details Method for forming resist pattern Method for forming resist pattern

2005-05-24

2005-05-24

Duda, Kathleen (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Use of sound or nondigital compressive force

C430S311000, C430S322000, C430S330000

Reexamination Certificate

active

06896997

ABSTRACT:
A method of forming a resist pattern on a semiconductor substrate, includes forming a resist film on the semiconductor substrate, and supplying a developing solution on the resist film to remove the resist film, wherein a portion of the resist film remains on the semiconductor substrate. The method also includes providing a rinsing liquid from a rinsing liquid supplying nozzle on the semiconductor substrate on which the patterned resist film is formed in such a way that the rinsing liquid remains on the semiconductor substrate by surface tension, ultrasonic vibration being applied to the rinsing liquid supplying nozzle, and removing the rinsing liquid remaining on the semiconductor substrate.

REFERENCES:
patent: 4547455 (1985-10-01), Hiramoto et al.
patent: 6372389 (2002-04-01), Watanabe
patent: 20020055049 (2002-05-01), Watanabe

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