Etching a substrate: processes – Forming or treating article containing magnetically...
Patent
1995-12-11
1997-08-19
Powell, William
Etching a substrate: processes
Forming or treating article containing magnetically...
216 40, 216 41, B44C 122
Patent
active
056584695
ABSTRACT:
A method for forming a re-entrant photoresist lift-off profile for thin film device processing of particular utility in conjunction with self-aligned sputtered films, such as permanent magnet ("PM") films, for use in magnetoresistive ("MR") read heads as well as a device made thereby. Photoresist is patterned in a conventional manner upon the thin film layers overlying a suitable substrate and the photoresist is then exposed to a suitable developer resulting in photoresist regions having substantially vertical sidewalls. An electron beam, or other suitable energy source, is then utilized to cross-link (or render relatively insoluble) the upper portion of the positive tone resist image by accelerating a sufficient dose of electrons into the photoresist to a well controlled depth. A second electron beam is then distributed throughout the entire photoresist thickness to render the lower portion of it relatively more soluble in a developer. The resist is then developed for a predetermined time to achieve an undercut in the lower portion of the photoresist.
REFERENCES:
patent: 5467881 (1995-11-01), Gill
Livesay, W.R.; Vertical Lithography-Controlling Resist Profiles in Optical Lithography with a Large Area Electron Beam; Copyright 1994 Electron Vision Corporation.
Kubida William J.
Powell William
Quantum Peripherals Colorado, Inc.
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