Semiconductor device manufacturing: process – Quantum dots and lines
Reexamination Certificate
2006-04-04
2006-04-04
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
Quantum dots and lines
C438S478000, C438S764000, C438S783000, C257S014000
Reexamination Certificate
active
07022628
ABSTRACT:
Disclosed herein is a method for forming quantum dots, comprising the steps of (a) depositing a metal thin layer onto a substrate, (b) coating a dielectric precursor onto the metal thin layer, and (c) stepwisely heating the resultant substrate; or a method for forming quantum dots, comprising the steps of (a) mixing a dielectric precursor diluted in a solvent and a metal powder and stirring the mixture, (b) coating the mixture onto a substrate, and (c) heating the resultant substrate. The method can easily control the size, density and uniformity of metal oxide quantum dots.
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Chung Yoon
Jeon Hyoung-Jun
Kim Young-Ho
Park Hwan-Pil
Yoon Chong-Seung
Hamre Schumann Mueller & Larson P.C.
Industry-University Cooperation Foundation Hanyang University
Picardat Kevin M.
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