Method for forming quantum dots

Details Method for forming quantum dots Method for forming quantum dots

1992-07-28

1993-07-20

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

156612, 250398, 2504922, 430296, 430297, H01L 21203, G01K 108, G21G 2500, G03C 500

Patent

active

052293203

ABSTRACT:
Disclosed is a method which enabled the precise formation of a group of quantum dots. A device which functions on the principle of a transmission type electron microscope is used to produce a beam of electrons which are passed through a thin crystal membrane in order to produce an electron beam diffraction image. The energy distribution of the diffracted electron beam is used to produce masks, enable epitaxial growth and dry etching involved with the microscopic fabrication operations. For example, a thin GaAs membrane is used to form a diffracted electron beam image on a GaAs layer formed on a substrate. Carbon is then supplied and used to form carbon layers on the the locations where the beam energy is strongest. These carbon layers are used as a mask which allow selective etching of the GaAs layer. An AlGaAs insulating layer is then epitaxially grown on the exposed surface portions of the AlGaAs substrate to fill the spaces between each of the quantum dot defining GaAs portions which project up from the AlGaAs substrate surface.

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Broers et al. "Electron-Beam Fabrication of 80.ANG. Metal Structures" in Appld. Phys. Letters 29(9), 596-598 (1976).
Morrissey et al. "E-Beam Contamination as a Mask"in IBM Technical Disclosure Bulletin 20(6), 2212 (1977).

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