Semiconductor device manufacturing: process – Quantum dots and lines
Reexamination Certificate
2007-12-11
2007-12-11
Jackson, Jerome (Department: 2815)
Semiconductor device manufacturing: process
Quantum dots and lines
C257S017000, C257SE21132, C977S781000, C977S782000
Reexamination Certificate
active
10991971
ABSTRACT:
The method for forming a quantum dot according to the present invention comprises the step of forming an oxide in a dot-shape on the surface of a semiconductor substrate10, the step of removing the oxide to form a concavity16in the position from which the oxide has been removed, and the step of growing a semiconductor layer18on the semiconductor substrate with the concavity formed in to form a quantum dot20of the semiconductor layer in the concavity. The concavity is formed in the semiconductor substrate by forming the oxide dot in the surface of the semiconductor substrate and removing the oxide, whereby the concavity can be formed precisely in a prescribed position and in a prescribed size. The quantum dot is grown in such a concavity, whereby the quantum dot can have good quality and can be formed in a prescribed position and in a prescribed size.
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Ohshima Toshio
Song Hai-Zhi
Jackson Jerome
Westerman, Hattori, Daniels & Adrian , LLP.
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