Method for forming Pt-Si Schottky barrier contact

Details Method for forming Pt-Si Schottky barrier contact Method for forming Pt-Si Schottky barrier contact

1978-04-26

1979-01-23

Mack, John H.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

C23C 1500

Patent

active

041359984

ABSTRACT:
Use of a rare gas in combination with oxygen or nitrogen to sputter etch unreacted platinum after formation of a platinum silicide contact structure for the formation of a Schottky Barrier diode in a silicon semiconductor substrate.

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J. J. Cuomo et al., "Selective Etch for Platinum Particular to Platinum Silicide Contact," IBM Tech. Disc. Bull., vol. 11, p. 1771 (1969).
A. L. Parker et al., "Removing Elemental Platinum from Silicon Deposits," IBM Tech. Disc. Bull., vol. 15, p. 2558 (1973).
M. Briska et al., "Producing a Schottky Contact by Annealing Pt and Cr Layers Deposited on an Si Substrate," IBM Tech. Disc. Bull., vol. 20, p. 1049 (1977).
T. M. Ruth et al., "Lift-Off Compatible All-Sputter Process," IBM Tech. Disc. Bull., vol. 20, pp. 4815-4816 (Apr. 1978).
L. Berenbaum et al., "Low Temperature In Situ Process for Schottky Barrier Diodes," IBM Tech. Disc. Bull., vol. 20, pp. 4384-4385, (Apr. 1978).

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