Method for forming programmable resistive element

Details Method for forming programmable resistive element Method for forming programmable resistive element

1990-11-16

1992-09-15

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437107, H01L 2172, H01L 21203

Patent

active

051478170

ABSTRACT:
A programmable resistive element is provided which includes a channel 16 comprising a layer of gallium arsenide. A programming barrier 18 is disposed outwardly from channel 16. A storage gate 20 comprising a layer of intrinsic gallium arsenide is disposed outwardly from programming barrier 18. An insulator 22, comprising a layer of aluminum-gallium-arsenide, is disposed outwardly from storage gate 20. A control gate 24 is disposed outwardly from insulator 22. First and second spaced apart contacts 26 and 28 contact channel 16.

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Kostalsky et al., "Novel High-Speed Transistor Based on Charge Emission from a Quantum Well", Appl. Phys. Lett., 52(11), Mar. 14, 1988, pp. 904-906.
Brodsky et al., "GaAs Electrically Alterable Read-Only Memory", IBM Tech. Disc. Bull., vol. 25, No. 3A, Aug. 1982, p. 1250.

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