Method for forming porous film

Details Method for forming porous film Method for forming porous film

2007-04-17

2007-04-17

Peng, Kuo-Liang (Department: 1712)

Coating processes

With post-treatment of coating or coating material

Heating or drying

C528S481000, C524S588000

Reexamination Certificate

active

10812420

ABSTRACT:
After applying a film-forming composition containing a polysiloxane, a pore-forming agent, an onium salt, and a solvent onto a semiconductor substrate, the solvent is evaporated from the film-forming composition in a first heat treatment. Then, a second heat treatment is carried out in an inert-gas atmosphere to promote the polymerization of the polysiloxane and thus form a polysiloxane resin film. Thereafter, a third heat treatment is carried out in an oxidizing-gas ambient to form pores in the polysiloxane resin film.

REFERENCES:
patent: 6342454 (2002-01-01), Hawker et al.
patent: 2002/0132496 (2002-09-01), Ball et al.
patent: 0 997 497 (2000-05-01), None
patent: 1 142 832 (2001-10-01), None
patent: 1 260 991 (2002-11-01), None
patent: 2001-098218 (2001-04-01), None
patent: 2002-060691 (2002-02-01), None

Affiliated with

Also associated with

Rating

Method for forming porous film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming porous film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming porous film will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3745075