Method for forming pore structure for programmable device

Details Method for forming pore structure for programmable device Method for forming pore structure for programmable device

2005-01-11

2005-01-11

Pert, Evan (Department: 2829)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

Reexamination Certificate

active

06841397

ABSTRACT:
In an aspect, an apparatus is provided that sets and reprograms the state of programmable devices. In an aspect, the quantity of programmable material is minimized, and the programmable material that is reprogrammed from an amorphous to a crystalline state, and vice versa, is localized on a contact. In an aspect, a method is provided such that an opening is formed through a dielectric exposing a contact formed on a substrate. A spacer is formed within the opening and a programmable material is formed within the opening such that the spacer reduces the programmable material on the contact. A conductor is formed on the programmable material and the contact transmits to a signal line.

REFERENCES:
patent: 6420725 (2002-07-01), Harshfield

Affiliated with

Also associated with

Rating

Method for forming pore structure for programmable device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming pore structure for programmable device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming pore structure for programmable device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3377517