Coating processes – Coating by vapor – gas – or smoke
Patent
1995-09-05
1997-07-08
King, Roy V.
Coating processes
Coating by vapor, gas, or smoke
427 96, 427 97, 427125, 427255, 4272557, 437191, 437192, 437193, 437200, C23C 1600, H01L 2128
Patent
active
056458878
ABSTRACT:
A method for forming platinum silicide plugs suitable for use in very large scale integrated semiconductor devices having large aspect ratios. The method includes the steps of: providing a silicon substrate on which a conductive layer is formed; forming an insulating layer on the silicon substrate and the conductive layer; patterning the insulating layer to form a contact hole on the conductive layer; exposing the conductive layer to air to thereby form a thin native oxide layer on the conductive layer; forming a blanket polysilicon film on the entire resulting structure thick enough to completely fill the contact hole; etching back the blanket polysilicon film to expose the insulating layer, thereby forming a silicon plug in the contact hole; forming a platinum layer on the silicon plug and the insulating layer; performing heat treatment to thereby convert the silicon plug to a platinum silicide plug; and thereafter removing the remaining platinum layer.
REFERENCES:
patent: 4737051 (1989-06-01), Farb et al.
patent: 4818723 (1989-04-01), Yen
patent: 4966868 (1990-10-01), Murali et al.
patent: 5364817 (1994-11-01), Lur et al.
patent: 5427981 (1995-06-01), Choi
Paper entitled "A New Contact Plug Technique for Deep-Submicrometer ULSI's Employing Selective Nickel Silicidation of Polysilicon with a Titanium Nitride Stopper" by Tadashi Iijima, et al., published in IEEE Transactions on Electron Devices, vol. 40. No. 2, Feb., 1993.
King Roy V.
LG Semicon Co. Ltd.
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