Method for forming patterns on a semiconductor device using...

Details Method for forming patterns on a semiconductor device using... Method for forming patterns on a semiconductor device using...

2006-04-18

2006-04-18

Nguyen, Cuong (Department: 2811)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S047000, C438S204000

Reexamination Certificate

active

07029938

ABSTRACT:
Upon formation of a collector electrode around a base mesa by the lift-off method, a resist film is formed over connection portions between the outer periphery of a region OA1and a region in which the base mesa is formed, followed by successive formation of gold germanium, nickel and Au in this order over the entire surface of a substrate, so that the resulting stacked film will not become an isolated pattern. Thus, the stacked film over the base mesa is connected to a stacked film at the outer periphery of the region OA1, facilitating peeling of the stacked film over the base mesa. Generation of side etching upon formation of a via hole extending from the back side of the substrate to a backside via electrode is reduced by forming the backside via electrode using a material which hardly reacts with an n-type GaAs layer or n-type InGaAs layer.

REFERENCES:
patent: 2001/0010388 (2001-08-01), Yanagihara et al.
patent: 2003/0218185 (2003-11-01), Ohbu et al.
patent: 2000-277530 (2000-10-01), None
patent: 2001-189319 (2001-07-01), None
patent: 2002-246587 (2002-08-01), None

Affiliated with

Also associated with

Rating

Method for forming patterns on a semiconductor device using... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming patterns on a semiconductor device using..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming patterns on a semiconductor device using... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3595055