Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Reexamination Certificate
2008-05-27
2008-05-27
Nguyen, Cuong (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
C257S200000, C257S565000
Reexamination Certificate
active
07378690
ABSTRACT:
Provided is a technique of improving the properties of a bipolar transistor. Described specifically, upon formation of a collector electrode around a base mesa by the lift-off method, a resist film is formed over connection portions between the outer periphery of a region OA1and a region in which the base mesa4ais formed, followed by successive formation of gold germanium (AuGe), nickel (Ni) and Au in the order of mention over the entire surface of a substrate so that the stacked film of them will not become an isolated pattern. As a result, the stacked film over the base mesa4ais connected to a stacked film at the outer periphery of the region OA1, facilitating peeling of the stacked film over the base mesa4a. In addition, generation of side etching upon formation of a via hole extending from the back side of the substrate to a backside via electrode is reduced by forming the backside via electrode using a material such as WSi which hardly reacts with an n type GaAs layer or n type InGaAs layer.
REFERENCES:
patent: 2001/0010388 (2001-08-01), Yanagihara et al.
patent: 2003/0218185 (2003-11-01), Ohbu et al.
patent: 2000-277530 (2000-10-01), None
patent: 2001-189319 (2001-07-01), None
patent: 2002-246587 (2002-08-01), None
Imamura Yoshinori
Inagawa Hiroshi
Kitahara Toshiaki
Kurokawa Atsushi
Antonelli, Terry Stout & Kraus, LLP.
Nguyen Cuong
Renesas Technology Corp.
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