Method for forming patterns in a semiconductor device

Details Method for forming patterns in a semiconductor device Method for forming patterns in a semiconductor device

2007-05-22

2007-05-22

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S780000, C438S669000, C438S636000

Reexamination Certificate

active

10461107

ABSTRACT:
A method for forming a pattern of a semiconductor device is disclosed which can increase the contact area between a photoresist and an anti-reflective film by performing an etching process on the anti-reflective film in a process of forming a photoresist pattern for a semiconductor device so as to form fine irregularities, thereby preventing collapse of a photoresist pattern. The disclosed method includes: (a) forming an organic anti-reflective film by coating an organic anti-reflective coating composition onto an upper portion of a layer to be etched, and performing a baking process thereto; (b) forming fine irregularities on the organic anti-reflective film by performing an etching process on the formed organic anti-reflective film; and (c) forming a photoresist pattern by coating a photoresist on the upper portion of the organic anti-reflective film, exposing the photoresist and then developing the same.

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