Method for forming patterns by plasma etching

Details Method for forming patterns by plasma etching Method for forming patterns by plasma etching

1980-10-09

1983-03-22

Paschall, M. H.

Electric heating

Metal heating

By arc

219121PF, 219121EK, 156628, 156643, 156646, 204192N, B23K 900

Patent

active

043777341

ABSTRACT:
Ions of a metal which becomes passive under the presence of oxygen with regard to plasma etching are implanted into selected portions of the surface of a workpiece, after which the workpiece is subjected to plasma etching with a reaction gas mixed with oxygen, whereby that layer which has been rendered passive acts as a mask, and an etched pattern is formed.

REFERENCES:
patent: 3808068 (1974-04-01), Johnson et al.
patent: 3915757 (1975-10-01), Engel
patent: 4057895 (1977-11-01), Ghezzo
patent: 4074139 (1978-02-01), Pankove
patent: 4092209 (1978-05-01), Ipri
patent: 4093503 (1978-06-01), Harris et al.
patent: 4108715 (1978-08-01), Ishikawa
patent: 4243506 (1981-01-01), Ikeda et al.
"Reversal Etching of Chromium Film in Gas Plasma", 10-1979, pp. 1794-1798, Solid State Science and Technology.

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