Method for forming patterned films on a substrate

Fishing – trapping – and vermin destroying

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437228, 437229, 437944, 148DIG100, H01L 21283

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active

052408787

ABSTRACT:
A method of forming patterned films on a semiconductor substrate 10 includes the steps of depositing a hardened photo resist underlay 30 onto the substrate, then depositing a polyether sulfone release layer 32, then depositing a photo sensitive resist layer 34 and exposing an etching a metallization pattern 36, 38 to the substrate 10. The structure is then blanket deposited with a conductive layer 40 to thereby create a conductive contact stud 42. The film layer 40 and resist layer 34 are removed by dissolving the polyether sulfone layer 32 in an NMP solution and the photo resist underlayer 30 is then removed using a selective photo resist stripper composition.

REFERENCES:
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patent: 4040891 (1977-08-01), Chang et al.
patent: 4410622 (1983-10-01), Dalal
patent: 4519872 (1985-05-01), Anderson, Jr. et al.
patent: 4539222 (1985-09-01), Anderson, Jr. et al.
patent: 4803181 (1989-02-01), Buchmann
patent: 4861732 (1989-08-01), Fujimura
patent: 4886728 (1989-12-01), Salamy
patent: 5091103 (1992-02-01), Dean et al.
"Image Reversal Lift-off Process wiring a release layer", IBM Tech. Disc. Bull., vol. 29, No. 11, Apr. 1987, p. 4935.
IBM Technical Disclosure Bulletin, vol. 19, No. 4, Sep. 1976, "Stripping Promotor for Lift-off Mask", by P. Carr et al.

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