Method for forming patterned conductive film, electrooptical...

Radiation imagery chemistry: process – composition – or product th – Visible imaging including step of firing or sintering

Reexamination Certificate

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C430S200000, C430S311000, C430S330000, C430S964000, C438S662000, C438S669000

Reexamination Certificate

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07105264

ABSTRACT:
Exemplary embodiments of the present invention provide a method to form a patterned conductive film by modifying a conductive thin film on a substrate irrespective of the material used for the substrate. Exemplary embodiments include a substrate having a conductive layer containing a conductive material and a photothermal conversion layer containing a photothermal conversion material that converts light energy into heat energy that is irradiated with a laser beam to fire at least part of the conductive layer with the photothermal conversion material.

REFERENCES:
patent: 4931323 (1990-06-01), Manitt et al.
patent: 4942110 (1990-07-01), Genovese et al.
patent: 5685939 (1997-11-01), Wolk et al.
patent: 2002/0090565 (2002-07-01), Griffith et al.
patent: 2003/0146019 (2003-08-01), Hirai
patent: 2006/0003262 (2006-01-01), Yang et al.
patent: 03262187 (1991-11-01), None
patent: A 5-21387 (1993-01-01), None
patent: A-2003-215816 (2000-07-01), None
patent: A-2001-168061 (2001-06-01), None
patent: 10-0349282 (2001-04-01), None

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