Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-04-05
2005-04-05
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S691000, C438S700000, C438S735000, C438S778000, C438S781000, C438S623000, C438S624000
Reexamination Certificate
active
06875704
ABSTRACT:
A method for forming a pattern using a printing process is disclosed in the present invention. The method includes forming a resist layer on a substrate having an etching layer thereon, locating a master having a convex pattern over the substrate, pressing the master against the substrate until the convex pattern of the master directly contacts the etching layer, and removing a portion of the resist layer to expose a surface over the substrate, the removed portion of the resist layer having a width substantially the same as the convex portion of the master.
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Baek Myoung-Kee
Park Kwon-Shik
Anya Igwe U.
LG.Philips LCD Co. , Ltd.
Morgan & Lewis & Bockius, LLP
Smith Matthew
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