Semiconductor device manufacturing: process – Chemical etching
Reexamination Certificate
2007-10-02
2007-10-02
Norton, Nadine (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
C216S041000, C216S023000, C438S689000, C438S694000, C438S030000, C438S021000, C438S743000, C438S691000, C438S700000
Reexamination Certificate
active
11114095
ABSTRACT:
A method for forming a pattern is provided that includes: providing a cliché having a plurality of convex patterns; applying an adhesive force reinforcing agent onto each surface of the convex patterns; forming an etching object layer on a substrate and then applying ink onto an upper portion of the etching object layer; attaching the cliché and the substrate to each other such that the convex patterns onto which the adhesive force reinforcing agent is applied can come in contact with the ink applied onto the etching object layer; and forming ink patterns which selectively remain on the etching object layer by separating the substrate and the cliché from each other.
REFERENCES:
patent: 6375870 (2002-04-01), Visovsky et al.
patent: 2005/0243233 (2005-11-01), Kim
patent: 2002-280711 (2002-09-01), None
patent: 2003-82469 (2003-03-01), None
George Patricia A.
LG.Philips Co., Ltd.
McKenna Long & Aldridge LLP
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