Etching a substrate: processes – Gas phase etching of substrate – Etching inorganic substrate
Patent
1997-08-13
1999-04-06
Powell, William
Etching a substrate: processes
Gas phase etching of substrate
Etching inorganic substrate
216 75, B44C 122
Patent
active
058913513
ABSTRACT:
A method for forming a pattern on a surface of a steel substrate includes the formation of a patterned mask on the surface of the steel substrate. The entire surface having the patterned mask is etched by reactive ion etching such the a pattern is formed on the surface of the steel substrate. The reactive ion etching is brought about by a plasma which is produced in an atmosphere of a chlorine-containing compound, under pressure of 1-100 mTorr, and with a radio frequency power of 100-600 W.
REFERENCES:
patent: 5348616 (1994-09-01), Hartman et al.
patent: 5735896 (1998-04-01), Amon et al.
Ho Nien-Show
Lee Chih-Kung
Liao Hong-Zong
Lu Shey-Shi
Goudreau George
National Science Council
Powell William
LandOfFree
Method for forming pattern on steel substrate by reactive ion et does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming pattern on steel substrate by reactive ion et, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming pattern on steel substrate by reactive ion et will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1368274