Method for forming pattern of stacked film

Details Method for forming pattern of stacked film Method for forming pattern of stacked film

2005-08-23

2005-08-23

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S158000, C438S585000, C438S723000, C438S733000, C438S738000, C438S743000

Reexamination Certificate

active

06933241

ABSTRACT:
A semiconductor film serving as an active region of a thin film transistor and an upper oxide film protecting the semiconductor film are dry etched to form the active region. In this case, a fluorine-based gas is used as the etching gas, and the etching gas is switched from the fluorine-based gas to a chlorine-based gas at a point of time when a lower oxide film as an underlying film of the semiconductor film is exposed. As the fluorine-based gas, a mixed gas of CF4and O2is used, and suitably, a gas ratio of CF4and O2in the mixture gas is set at 1:1, and the dry etching is performed therefor. By this etching, a side face of a two-layer structure of the semiconductor film and upper oxide film is optimally tapered, and a crack or a disconnection is prevented from being occurring in a film crossing over the two-layer structure.

REFERENCES:
patent: 5663578 (1997-09-01), Hsu et al.
patent: 5728259 (1998-03-01), Suzawa et al.
patent: 5856239 (1999-01-01), Bashir et al.
patent: 6124154 (2000-09-01), Miyasaka
patent: 6235214 (2001-05-01), Deshmukh et al.
patent: 6399286 (2002-06-01), Liu et al.
patent: 01-100924 (1989-04-01), None
patent: 02-082579 (1990-03-01), None
patent: 09-263974 (1997-10-01), None
patent: 2001-332741 (2001-11-01), None
patent: 20003-131261 (2003-05-01), None

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