Method for forming pattern in semiconductor device

Details Method for forming pattern in semiconductor device Method for forming pattern in semiconductor device

2011-08-09

2011-08-09

Norton, Nadine G (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S689000, C438S700000, C438S703000, C216S041000

Reexamination Certificate

active

07994056

ABSTRACT:
A method for forming a pattern in a semiconductor device includes forming an etch-target layer over a substrate, wherein the substrate includes a first region having a smaller pattern than the first region, forming a sacrificial layer and a passivation layer over the etch-target layer, etching the passivation layer and the sacrificial layer to form stack structures including a sacrificial pattern and a passivation pattern, forming spacers over sidewalls of the stack structures, forming a mask pattern covering the second region, removing a portion of the passivation pattern in the first region exposed by the mask pattern to expose a portion of the sacrificial pattern in the first region, removing the exposed portion of the sacrificial pattern in the first region, and etching the etch-target layer to form an etch-target pattern using the spacers in the first and second regions and the stack structure formed between the spacers in the second region.

REFERENCES:
patent: 6750127 (2004-06-01), Chang et al.
patent: 6835662 (2004-12-01), Erhardt et al.
patent: 2006/0046484 (2006-03-01), Abatchev et al.
patent: 2006/0105506 (2006-05-01), Shen
patent: 2008/0081461 (2008-04-01), Lee et al.
patent: 1020070058578 (2007-06-01), None

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