Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Patent
1997-07-11
1999-02-23
Niebling, John F.
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
438483, 438796, H01L 2122
Patent
active
058743200
ABSTRACT:
A method for forming P-type gallium nitride is disclosed in the invention. In this method, Mg--H can be completly discomposed by use of an annealing process, thereby entirely dissociating the hydrogen atoms from the gallium nitride, while the nitrogen atoms are not dissociated from the gallium nitride. Therefore, the P-type gallium nitride having high conductivity is obtained and V.sub.N gap defects created in the gallium nitride do not occur. During the annealing process, nitrogen flux is added around the gallium nitride to prevent decomposition of the gallium nitride. The above-mentioned nitrogen flux can be generated by use of RF plasma, electron cyclotron resonance (ECR) or ion beam. Furthermore, since a forward current is provided across the P--N junction of the gallium nitride, the Mg--H inside the magnesium-doped gallium nitride can be decomposed by just increasing the temperature to 175.degree. C. Therefore, in the invention, when a diode structure is manufactured with gallium nitride, the hydrogen atoms can be dissociated from the gallium nitride in a low-temperature process, thereby activating the magnesium (acceptor), such that the conductivity of the P-type gallium nitride is further increased and V.sub.N gap defects caused by a high-temperature process are prevented.
REFERENCES:
patent: 5290393 (1994-03-01), Nakamura
patent: 5306662 (1994-04-01), Nakamura et al.
patent: 5496766 (1996-03-01), Amano et al.
patent: 5633192 (1997-05-01), Moustakas et al.
patent: 5652434 (1997-07-01), Nakamura et al.
patent: 5657335 (1997-08-01), Rubin et al.
Chen Chin-Yuan
Hong Ming-Huang
Huang Chao-Nien
Lee Biing-Jye
Shih Kwang-Kuo
Industrial Technology Research Institute
Mulpuri S.
Niebling John F.
LandOfFree
Method for forming P-type gallium nitride does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming P-type gallium nitride, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming P-type gallium nitride will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-306321