Method for forming oxide film on silicon wafer

Details Method for forming oxide film on silicon wafer Method for forming oxide film on silicon wafer

2009-03-24

2011-10-25

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

With measuring or testing

Optical characteristic sensed

Reexamination Certificate

active

08043871

ABSTRACT:
The present invention provides a method for forming an oxide film on a silicon wafer, comprising: measuring surface roughness of the silicon wafer and/or crystallinity in a surface layer portion of the silicon wafer in advance; adjusting oxidizing conditions for the silicon wafer based on the measurement value; and forming the oxide film on the silicon wafer under the adjusted oxidizing conditions. As a result, there can be provided the method for forming an oxide film by which the oxidizing conditions can be adjusted based on a state of the surface and/or the surface layer of the silicon wafer before forming the oxide film and even an ultrathin oxide film can be thereby accurately formed.

REFERENCES:
patent: 6020247 (2000-02-01), Wilk et al.
patent: 2007/0145535 (2007-06-01), Ohmi et al.
patent: 2008/0187768 (2008-08-01), Kouvetakis et al.
patent: 0 592 671 (1994-04-01), None
patent: A-05-013395 (1993-01-01), None
patent: A-10-079376 (1998-03-01), None
Deal, “Thermal Oxidation Kinetics of Silicon in Pyrogenic H2O and 5% HCI/H2O Mixtures,”Journal of the Electrochemical Society: Solid-State Science Technology, vol. 125, No. 4, pp. 576-579, 1978.
Irene et al., “Silicon Oxidation Studies: Silicon Orientation Effects on Thermal Oxidation,”Journal of the Electrochemical Society: Solid-State Science and Technology, vol. 133, No. 6, pp. 1253-1256, 1986.
Raider et al., “Reversal of Relative Oxidation Rates of <111> and <100> Oriented Silicon Substrates at Low Oxygen Partial Pressures,”Journal of the Electrochemical Society: Solid-State Science and Technology, vol. 127, No. 8, pp. 1783-1787, 1980.
Deal et al., “Thermal Oxidation of Heavily Doped Silicon,”Journal of the Electrochemical Society, vol. 112, No. 4, pp. 430-435, 1965.
Ho et al., “Thermal Oxidation of Heavily Phosphorus-Doped Silicon,”Journal of the Electrochemical Society: Solid-State Science and Technology, vol. 125, No. 4, pp. 665-671, 1978.
Choi et al., “Anomalous oxidation rate of silicon implanted with very high doses of arsenic,” Appl. Phys. Lett., vol. 51, No. 13, pp. 1001-1003, 1987.
Ho et al., “Si/SiO2Interface Oxidation Kinetics: A Physical Model for the Influence of High Substrate Doping Levels, I, Theory,”Journal of the Electrochemical Society: Solid-State Science and Technology, vol. 126, No. 9, pp. 1516-1522, 1979.
Ho et al., “Si/SiO2Interface Oxidation Kinetics: A Physical Model for the Influence of High Substrate Doping Levels, II. Comparison with Experiment and Discussion,”Journal of the Electrochemical Society: Solid-State Science and Technology, vol. 126, No. 9, pp. 1523-1530, 1979.
Takakuwa, “Growth Kinetics of Very Thin Oxide Layers on Si(001) Surface Monitored in Real-time by Auger Electron Spectroscopy Combined with Reflection High Energy Electron Diffraction,” Surface Science, vol. 23, No. 9, pp. 536-552, 2002 (with abstract).
International Search Report issued in International Application No. PCT/JP2009/001281 dated Jun. 16, 2009.
International Preliminary Report on Patentability issued in International Patent Application No. PCT/JP2009/001281 dated Dec. 13, 2010.

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