Method for forming ONO top oxide in NROM structure

Details Method for forming ONO top oxide in NROM structure Method for forming ONO top oxide in NROM structure

2005-11-08

2005-11-08

Chen, Bret (Department: 1762)

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

C427S255394, C427S255700, C427S376200

Reexamination Certificate

active

06962728

ABSTRACT:
A method for making a silicon oxide/silicon nitride/silicon oxide structure includes forming a tunnel oxide layer and a silicon nitride layer over a substrate; annealing the silicon nitride layer; forming a silicon oxide layer over the annealed silicon nitride layer by high temperature low pressure chemical vapor deposition; depositing a first gate layer over the silicon oxide layer; patterning to form a silicon oxide/silicon nitride/silicon oxide (ONO) structure; forming bit lines in the substrate adjacent the ONO structure; and annealing to form a thermal oxide over the bit lines.

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Eli Lusky, Yosi Shacham-Diamand, Ilan Bloom and Boaz Eitan, Electron Discharge Model of Locally-Trapped Charge in Oxide-Nitride-Oxide (ONO) Gates for NROM Non-Volatile Semiconductor Memory Devices, Sep. 2001 pp 1-2.
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