Method for forming multilayer insulating film of semiconductor d

Details Method for forming multilayer insulating film of semiconductor d Method for forming multilayer insulating film of semiconductor d

1996-01-22

1998-06-09

King, Roy V.

Coating processes

Coating by vapor, gas, or smoke

4272554, 4272557, 427344, 427402, 427578, 427579, 438783, 438624, C23C 1600, H01L 21223

Patent

active

057630054

ABSTRACT:
For a multilayer insulating film of a semiconductor device, the distributed quantity of carbon or fluorine is maximized at the interface between insulating films. The concentration of carbon present at the interface is 1.times.10.sup.20 atoms/cm.sup.3 or more.

REFERENCES:
patent: 4161743 (1979-07-01), Yonezawa et al.
patent: 5506443 (1996-04-01), Furumura et al.

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