Method for forming multilayer electrode capacitor

Details Method for forming multilayer electrode capacitor Method for forming multilayer electrode capacitor

2007-12-25

2007-12-25

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S254000, C257S307000, C257S532000, C257SE21648

Reexamination Certificate

active

10998929

ABSTRACT:
A method of forming a multilayer electrode capacitor is described. A trench is formed in a substrate or in an insulator layer. Two sets of conductive layers are deposited on the inner surface of the trench. The first set of conductive layers is electrically connected to each other, and so is the second set of conductive layers. Each of the second set of conductive layers is inserted between two first conductive layers, and dielectric layers are interposed between two conductive layers to form a multilayer electrode capacitor.

REFERENCES:
patent: 4685197 (1987-08-01), Tigelaar et al.
patent: 5262662 (1993-11-01), Gonzalez et al.
patent: 5898982 (1999-05-01), Metzler et al.
patent: 6261895 (2001-07-01), Adkisson et al.
patent: 6437385 (2002-08-01), Bertin et al.
patent: 2004/0036051 (2004-02-01), Sneh

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