Method for forming most capacitor using polysilicon islands

Details Method for forming most capacitor using polysilicon islands Method for forming most capacitor using polysilicon islands

1994-03-18

1996-01-09

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 60, 437919, H01L 2700, H01L 2170

Patent

active

054828821

ABSTRACT:
A MOST capacitor for use in a DRAM cell by using non-uniform silicide formations on polysilicon to define a plurality of polysilicon pillars. Unreacted polysilicon islands are used as a mask to selectively form the pillars in the polysilicon electrode layer.

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