Method for forming most capacitor using poly spacer technique

Details Method for forming most capacitor using poly spacer technique Method for forming most capacitor using poly spacer technique

1994-03-18

1996-01-09

Fourson, George

Fishing, trapping, and vermin destroying

437 52, 437919, H01L 2170, H01L 2700

Patent

active

054828856

ABSTRACT:
A MOST capacitor for use in a DRAM cell is formed by depositing a conductive polysilicon electrode layer on the substrate. Oxide lines are then formed on the polysilicon layer. Using the oxide lines as a mask, pillars are etched in the polysilicon electrode layer.

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